To additional boost its SiC technology, Infineon invested a great deal into testing on-state oxide reliability of electrically screened SiC MOSFETs as well as off state oxide stress due to electric field conditions in SiC power devices. Read through all about how Infineon controls and assures the reliability of SiC https://www.facebook.com/permalink.php?story_fbid=pfbid05B5NsVb7B6tL8oK3RNyTBDmn2BkeJRKdCpLrV2Ba1NqhRXEXzaCw1mm1PYHeVpayl&id=61562415773754&__cft__[0]=AZU71z4e4v0RrbhwcBFAKnAb-bgop12lLD5xzvzJ4I1yGolDJo-bYUyTaw3rgclo565KY_hpMb_nQ7Y80BCPV2T8MUt85ipd4J7ve04pYU615diQfAyJJkSpOyQF13vCVr5EImjfHSLzs9jD8C0Ndh4GV4nyZNkTjU2Pcv6sL13IYPrh-h7TSiMSM0gDCWTdDtspANKYKd0WfD27RXk_efQd&__tn__=%2CO%2CP-R